? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 100 v v gsm 20 v i d25 t c = 25 c 170 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 350 a i ar t c = 25 c60a e ar t c = 25 c80mj e as t c = 25 c 2.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 714 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque (to-3p) 1 .13/10 nm/lb.in. weight to-3p 5.5 g to-264 10 g to-268 5.0 g g = gate d = drain s = source tab = drain ds99176a(11/04) polarht tm power mosfet ixtq 170n10p v dss = 100 v ixtt 170n10p i d25 = 170 a ixtk 170n10p r ds(on) = 9.0 m ? ? ? ? ? n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-3p (ixtq) g d s (tab) to-268 (ixtt) g s d (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 9.0 m ? v gs = 15 v, i d = 350a 7.0 m ? pulse test, t 300 s, duty cycle d 2 % preliminary data sheet s g d (tab) to-264 (ixtk)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 50 72 s c iss 6000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 2340 pf c rss 730 pf t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 50 ns t d(off) r g = 3.3 ? (external) 90 ns t f 33 ns q g(on) 198 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 39 nc q gd 107 nc r thjc 0.21 k/w r thck (to-3p) 0.21 k/w (to-264) 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 170 a i sm repetitive 350 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 120 ns -di/dt = 100 a/ s q rm v r = 50 v 2.0 c ixtk 170n10p ixtq 170n10p ixtt 170n10p to-268 outline to-3p (ixtq) outline to-264 outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 40 80 120 160 200 240 280 320 00.511.522.533.544.55 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 20 40 60 80 100 120 140 160 180 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 20 40 60 80 100 120 140 160 180 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalize d i d = 170a i d = 85a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 0 50 100 150 200 250 300 350 i d - amperes r d s ( o n ) - normalize d t j = 25 o c v gs = 10v t j = 175 o c v gs = 15v ixtk 170n10p ixtq 170n10p ixtt 170n10p
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 fig. 11. capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 50v i d = 85a i g = 10m a fig. 7. input admittance 0 30 60 90 120 150 180 210 240 270 300 44.555.5 66.5 77.5 88.599.5 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 0 40 80 120 160 200 240 280 320 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 350 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175 o c t c = 25 o c r ds(on) limit 10ms ixtk 170n10p ixtq 170n10p ixtt 170n10p
? 2004 ixys all rights reserved fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w ixtk 170n10p ixtq 170n10p ixtt 170n10p
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